参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 880mA |
Rds On (Max) @ Id, Vgs | 400mOhm @ 880mA, 2.5V |
Vgs(th) (Max) @ Id | 750mV @ 1.6µA |
Gate Charge (Qg) (Max) @ Vgs | 0.26nC @ 2.5V |
Input Capacitance (Ciss) (Max) @ Vds | 78pF @ 10V |
Power - Max | 500mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package | PG-SOT363-PO |
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Infineon Technologies FET、MOSFET 阵列 产品 BSD840NH6327XTSA1
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