| 参数名称 | 参数值 |
|---|---|
| Product Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 800mA |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 10V |
| Power - Max | 500mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-666 |
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Nexperia FET、MOSFET 阵列 产品 PMDT290UNE,115
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