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SSM6L56FE,LM

¥2.74
FET、MOSFET 阵列

SMALL-SIGNAL MOSFET 2 IN 1 NCH +

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureLogic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)
Rds On (Max) @ Id, Vgs235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds55pF @ 10V, 100pF @ 10V
Power - Max150mW (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Package/ CaseSOT-563, SOT-666
Supplier Device PackageES6

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