参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 200mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 20 V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
Operating Temperature | 150°C |
Mounting Type | Through Hole |
Supplier Device Package | TO-220ML |
Package/ Case | TO-220-3 Full Pack |
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Sanyo 单 FET、MOSFET 产品 2SJ263
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