参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 99A |
Rds On (Max) @ Id, Vgs | 39mOhm @ 49.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 280nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 25V |
Power - Max | 781W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package/ Case | SP4 |
Supplier Device Package | SP4 |
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Microsemi FET、MOSFET 阵列 产品 APTM50DUM35TG
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