| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 46A |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 23A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 123nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600pF @ 25V |
| Power - Max | 357W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package/ Case | SP4 |
| Supplier Device Package | SP4 |
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Microsemi FET、MOSFET 阵列 产品 APTM50DHM75TG
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