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APTM100A12STG

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FET、MOSFET 阵列
Microsemi

MOSFET 2N-CH 1000V 68A LP8W

参数名称参数值
Product StatusDiscontinued at Digi-Key
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Half Bridge)
FET Feature-
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25°C68A
Rds On (Max) @ Id, Vgs120mOhm @ 34A, 10V
Vgs(th) (Max) @ Id5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs616nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds17400pF @ 25V
Power - Max1250W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package/ CaseSP3
Supplier Device PackageSP3

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Microsemi FET、MOSFET 阵列 产品 APTM100A12STG

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