| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 4.7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 30V |
| Power - Max | 2.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package/ Case | 8-DIP (0.300", 7.62mm) |
| Supplier Device Package | 8-PDIP |
新闻资讯
Alpha and Omega Semiconductor, Inc. FET、MOSFET 阵列 产品 AOP607
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