参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 180mA, 145mA |
Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id | 400mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 250mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | SOT-563, SOT-666 |
Supplier Device Package | SC-89 (SOT-563F) |
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Vishay/ Siliconix FET、MOSFET 阵列 产品 SI1035X-T1-E3
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