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SP8M6TB

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FET、MOSFET 阵列

MOSFET N/P-CH 30V 5A/3.5A 8SOIC

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5A, 3.5A
Rds On (Max) @ Id, Vgs51mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs3.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds230pF @ 10V
Power - Max2W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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