| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 4 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 31A |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 6V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7210pF @ 25V |
| Power - Max | 1140W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package/ Case | 16-MTP Module |
| Supplier Device Package | 16-MTP |
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Vishay General Semiconductor – Diodes Division FET、MOSFET 阵列 产品 19MT050XF
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