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PMGD8000LN,115

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FET、MOSFET 阵列

MOSFET 2N-CH 30V 0.125A 6TSSOP

参数名称参数值
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C125mA
Rds On (Max) @ Id, Vgs8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds18.5pF @ 5V
Power - Max200mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case6-TSSOP, SC-88, SOT-363
Supplier Device Package6-TSSOP

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