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CSD86356Q5D

¥7.57
FET、MOSFET 阵列

25V POWERBLOCK N CH MOSFET

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate, 5V Drive
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C40A (Ta)
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id1.85V @ 250µA, 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.9nC @ 4.5V, 19.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1040pF @ 12.5V, 2510pF @ 12.5V
Power - Max12W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-PowerTDFN
Supplier Device Package8-VSON-CLIP (5x6)

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Texas Instruments FET、MOSFET 阵列 产品 CSD86356Q5D

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