参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.2A |
Rds On (Max) @ Id, Vgs | 125mOhm @ 2.2A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 337pF @ 10V |
Power - Max | 700mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | SuperSOT™-6 |
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Fairchild Semiconductor FET、MOSFET 阵列 产品 FDC6310P
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