参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 12.5A |
Rds On (Max) @ Id, Vgs | 85mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 16.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1108pF @ 25V |
Power - Max | 38W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | SOT-1205, 8-LFPAK56 |
Supplier Device Package | LFPAK56D |
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NXP Semiconductors FET、MOSFET 阵列 产品 BUK9K89-100E,115
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