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BUK9K134-100EX

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FET、MOSFET 阵列

BUK9K134-100E - DUAL N-CHANNEL 1

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C8.5A
Rds On (Max) @ Id, Vgs159mOhm @ 5A, 5V
Vgs(th) (Max) @ Id2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs7.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds755pF @ 25V
Power - Max32W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package/ CaseSOT-1205, 8-LFPAK56
Supplier Device PackageLFPAK56D

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NXP Semiconductors FET、MOSFET 阵列 产品 BUK9K134-100EX

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