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G100C04D52

¥2.10
FET、MOSFET 阵列

N/P 40V,40A/-24A,RD(MAX)<9M/16M@

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration-
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C40A (Tc), 24A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V, 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2213pF @ 20V, 2451pF @ 20V
Power - Max65W (Tc), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-PowerTDFN
Supplier Device Package8-DFN (4.9x5.75)

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Goford Semiconductor FET、MOSFET 阵列 产品 G100C04D52

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