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G180N06S2

¥6.41
FET、MOSFET 阵列

MOSFET, N-CH, 60V,8A,SOP-8DUAL

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2330pF @ 30V
Power - Max2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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Goford Semiconductor FET、MOSFET 阵列 产品 G180N06S2

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