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G05NP04S

¥1.11
FET、MOSFET 阵列

N/P 40V,4.5A/-10A,RD(MAX)<41M/37

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration-
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc), 10A (Tc)
Rds On (Max) @ Id, Vgs41mOhm @ 1A, 10V, 37mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.9nC @ 10V, 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds516pF @ 20V, 520pF @ 20V
Power - Max2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

新闻资讯

Goford Semiconductor FET、MOSFET 阵列 产品 G05NP04S

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