参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | - |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta), 3A (Ta) |
Rds On (Max) @ Id, Vgs | 59mOhm @ 2.5A, 2.5V, 110mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA, 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V, 405pF @ 10V |
Power - Max | 1.1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | SOT-23-6 |
Supplier Device Package | SOT-23-6L |
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Goford Semiconductor FET、MOSFET 阵列 产品 6703
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