| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Phase Leg) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 150A |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 80A, 20V |
| Vgs(th) (Max) @ Id | 2.8V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 464nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6040pF @ 1000V |
| Power - Max | 560W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package/ Case | Module |
| Supplier Device Package | - |
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