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APTM120H29FG

¥2773.51
FET、MOSFET 阵列

MOSFET 4N-CH 1200V 34A SP6

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration4 N-Channel (Half Bridge)
FET Feature-
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C34A
Rds On (Max) @ Id, Vgs348mOhm @ 17A, 10V
Vgs(th) (Max) @ Id5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds10300pF @ 25V
Power - Max780W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package/ CaseSP6
Supplier Device PackageSP6

新闻资讯

Microchip Technology FET、MOSFET 阵列 产品 APTM120H29FG

作为Microchip Technology优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购APTM120H29FG时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买APTM120H29FG绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解APTM120H29FG产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

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