参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 4 N-Channel (Half Bridge) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 39A |
Rds On (Max) @ Id, Vgs | 70mOhm @ 39A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 2.7mA |
Gate Charge (Qg) (Max) @ Vgs | 259nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 25V |
Power - Max | 250W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package/ Case | SP1 |
Supplier Device Package | SP1 |
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Microchip Technology FET、MOSFET 阵列 产品 APTC60HM70T1G
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