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HP8S36TB

¥5.11
FET、MOSFET 阵列

30V NCH+NCH MIDDLE POWER MOSFET,

参数名称参数值
Product StatusNot For New Designs
Technology-
Configuration2 N-Channel (Half Bridge)
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C27A, 80A
Rds On (Max) @ Id, Vgs2.4mOhm @ 32A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs47nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds6100pF @ 15V
Power - Max29W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-PowerTDFN
Supplier Device Package8-HSOP

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ROHM Semiconductor FET、MOSFET 阵列 产品 HP8S36TB

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