| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 55A (Tc), 32A (Ta), 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.95mOhm @ 20A, 10V, 1.95mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA, 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V, 50nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1145pF @ 15V, 2265pF @ 15V |
| Power - Max | 3.5W (Ta), 24W (Tc), 3.5W (Ta), 39W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-VDFN Exposed Pad |
| Supplier Device Package | 8-DFN (5x6) |
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Alpha and Omega Semiconductor, Inc. FET、MOSFET 阵列 产品 AONX36324
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