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SH8M13GZETB

¥3.34
FET、MOSFET 阵列

MIDDLE POWER MOSFET SERIES (DUAL

参数名称参数值
Product StatusNot For New Designs
Technology-
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A, 7A
Rds On (Max) @ Id, Vgs29mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs18nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 10V
Power - Max2W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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ROHM Semiconductor FET、MOSFET 阵列 产品 SH8M13GZETB

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