参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 P-Channel |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
Rds On (Max) @ Id, Vgs | 50mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 0.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1230pF @ 10V |
Power - Max | 620mW (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 6-VDFN Exposed Pad |
Supplier Device Package | 6-TDFN (2x2) |
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Taiwan Semiconductor FET、MOSFET 阵列 产品 TSM500P02DCQ
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