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TSM500P02DCQ

¥3.36
FET、MOSFET 阵列

-20V, -4.7A, DUAL P-CHANNEL POWE

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.7A (Tc)
Rds On (Max) @ Id, Vgs50mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id0.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1230pF @ 10V
Power - Max620mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case6-VDFN Exposed Pad
Supplier Device Package6-TDFN (2x2)

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