参数名称 | 参数值 |
---|---|
Product Status | Not For New Designs |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 4.5A |
Rds On (Max) @ Id, Vgs | 29mOhm @ 4.5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 4200pF @ 6V |
Power - Max | 550mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 8-SMD, Flat Lead |
Supplier Device Package | TSMT8 |
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