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PJQ5848_R2_00001

¥2.29
FET、MOSFET 阵列
PANJIT

40V DUAL N-CHANNEL ENHANCEMENT M

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C8.6A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1040pF @ 20V
Power - Max1.7W (Ta), 20W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-PowerTDFN
Supplier Device PackageDFN5060B-8

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