参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 24V |
Current - Continuous Drain (Id) @ 25°C | 11A |
Rds On (Max) @ Id, Vgs | 28mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 5.7W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 6-UFBGA |
Supplier Device Package | 6-Micro Foot™ (1.5x1) |
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Vishay/ Siliconix FET、MOSFET 阵列 产品 SI8902AEDB-T2-E1
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