| 参数名称 | 参数值 |
|---|---|
| Product Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel Complementary |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA, 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 343pF @ 15V, 870pF @ 15V |
| Power - Max | 2W (Ta), 17.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-PowerWDFN |
| Supplier Device Package | DFN3030B-8 |
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PANJIT FET、MOSFET 阵列 产品 PJQ4602_R1_00001
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