参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 P-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
Rds On (Max) @ Id, Vgs | 100mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 392pF @ 10V |
Power - Max | 970mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 9-XFBGA, DSBGA |
Supplier Device Package | X2-DSN1515-9 (Type B) |
新闻资讯
Diodes Incorporated FET、MOSFET 阵列 产品 DMP2101UCP9-7
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