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AO6602G

¥1.31
FET、MOSFET 阵列

COMPLEMENTARY

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta), 2.7A (Ta)
Rds On (Max) @ Id, Vgs50mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.05nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds210pF @ 15V
Power - Max1.15W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ CaseSC-74, SOT-457
Supplier Device Package6-TSOP

新闻资讯

Alpha and Omega Semiconductor, Inc. FET、MOSFET 阵列 产品 AO6602G

作为Alpha and Omega Semiconductor, Inc.优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购AO6602G时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买AO6602G绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解AO6602G产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

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