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PMDPB85UPE,115

¥1.23
FET、MOSFET 阵列
Nexperia

MOSFET 2P-CH 20V 2.9A 6HUSON

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.9A
Rds On (Max) @ Id, Vgs103mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds514pF @ 10V
Power - Max515mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case6-UFDFN Exposed Pad
Supplier Device Package6-HUSON (2x2)

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Nexperia FET、MOSFET 阵列 产品 PMDPB85UPE,115

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