| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel Complementary |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V, 20V |
| Current - Continuous Drain (Id) @ 25°C | 390mA (Ta), 2.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA, 1.25V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.4pC @ 4.5V, 7.3nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 41pF @ 25V, 443pF @ 16V |
| Power - Max | 580mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 6-UDFN Exposed Pad |
| Supplier Device Package | U-DFN2020-6 (Type B) |
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