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AOCA32112E

¥0.83
FET、MOSFET 阵列

20V COMMON-DRAIN DUAL N-CHANNEL

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual) Common Drain
FET Feature-
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Rds On (Max) @ Id, Vgs48mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case4-SMD, No Lead
Supplier Device Package4-AlphaDFN (0.97x0.97)

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Alpha and Omega Semiconductor, Inc. FET、MOSFET 阵列 产品 AOCA32112E

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