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FS03MR12A6MA1LBBPSA1

¥16836.91
FET、MOSFET 阵列

HYBRID PACK DRIVE SIC AG-HYBRIDD

参数名称参数值
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration6 N-Channel (3-Phase Bridge)
FET Feature-
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C400A
Rds On (Max) @ Id, Vgs3.7mOhm @ 400A, 15V
Vgs(th) (Max) @ Id5.55V @ 240mA
Gate Charge (Qg) (Max) @ Vgs1320nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds42500pF @ 600V
Power - Max20mW
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package/ CaseModule
Supplier Device PackageAG-HYBRIDD-2

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Infineon Technologies FET、MOSFET 阵列 产品 FS03MR12A6MA1LBBPSA1

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