参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | Silicon Carbide (SiC) |
Configuration | 6 N-Channel (3-Phase Bridge) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 400A |
Rds On (Max) @ Id, Vgs | 3.7mOhm @ 400A, 15V |
Vgs(th) (Max) @ Id | 5.55V @ 240mA |
Gate Charge (Qg) (Max) @ Vgs | 1320nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 42500pF @ 600V |
Power - Max | 20mW |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package/ Case | Module |
Supplier Device Package | AG-HYBRIDD-2 |
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Infineon Technologies FET、MOSFET 阵列 产品 FS03MR12A6MA1LBBPSA1
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