参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | Silicon Carbide (SiC) |
Configuration | 2 N Channel (Phase Leg) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 700V |
Current - Continuous Drain (Id) @ 25°C | 585A (Tc) |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 200A, 20V |
Vgs(th) (Max) @ Id | 2.4V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs | 1075nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 22500pF @ 700V |
Power - Max | 1.625kW (Tc) |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Package/ Case | Module |
Supplier Device Package | - |
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Microchip Technology FET、MOSFET 阵列 产品 MSCSM70VR1M03CT6AG
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