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RJK0216DPA-00#J53

¥9.22
FET、MOSFET 阵列

POWER FIELD-EFFECT TRANSISTOR

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C15A, 32A
Rds On (Max) @ Id, Vgs9.2mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1130pF @ 10V
Power - Max10W, 20W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-WFDFN
Supplier Device Package8-DFN (5x6)

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