参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual), P-Channel |
FET Feature | - |
Drain to Source Voltage (Vdss) | 200V, 40V |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc), 30A (Tc) |
Rds On (Max) @ Id, Vgs | 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA, 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V |
Power - Max | 50W (Tc), 48W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | Die |
Supplier Device Package | Die |
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Vishay/ Siliconix FET、MOSFET 阵列 产品 SQUN700E-T1_GE3
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