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SQUN700E-T1_GE3

¥17.71
FET、MOSFET 阵列

40-V N- & P-CH COMMON DRAIN + 20

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual), P-Channel
FET Feature-
Drain to Source Voltage (Vdss)200V, 40V
Current - Continuous Drain (Id) @ 25°C16A (Tc), 30A (Tc)
Rds On (Max) @ Id, Vgs9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
Power - Max50W (Tc), 48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package/ CaseDie
Supplier Device PackageDie

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Vishay/ Siliconix FET、MOSFET 阵列 产品 SQUN700E-T1_GE3

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