参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 10.4A |
Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 752pF @ 15V |
Power - Max | 3.57W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
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NXP Semiconductors FET、MOSFET 阵列 产品 PHKD13N03LT,518
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