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PHKD13N03LT,518

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FET、MOSFET 阵列

SMALL SIGNAL FIELD-EFFECT TRANSI

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10.4A
Rds On (Max) @ Id, Vgs20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds752pF @ 15V
Power - Max3.57W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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