| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A, 8A |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 3.75A, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 10V |
| Power - Max | 1.5W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
新闻资讯
Renesas Electronics Corporation FET、MOSFET 阵列 产品 HAT2218R-EL-E
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