| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 10V |
| Power - Max | 2W |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SOIC (0.173", 4.40mm Width) |
| Supplier Device Package | 8-PSOP |
新闻资讯
Renesas Electronics Corporation FET、MOSFET 阵列 产品 UPA1793G-E1-AT
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