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UPA2352T1P-E4-A

¥3.31
FET、MOSFET 阵列

2-ELEMENT, N-CHANNEL MOSFET

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs43mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs5.7nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 10V
Power - Max750mW (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Package/ Case4-XFLGA
Supplier Device Package4-EFLIP-LGA (1.4x1.4)

新闻资讯

Renesas Electronics Corporation FET、MOSFET 阵列 产品 UPA2352T1P-E4-A

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