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BSC150N03LD

¥3.17
FET、MOSFET 阵列

N-CHANNEL POWER MOSFET

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A
Rds On (Max) @ Id, Vgs15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 15V
Power - Max26W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4

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Infineon Technologies FET、MOSFET 阵列 产品 BSC150N03LD

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