参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 P-Channel (Dual) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
Rds On (Max) @ Id, Vgs | 43mOhm @ 3.8A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1015pF @ 10V |
Power - Max | 600mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP |
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Fairchild Semiconductor FET、MOSFET 阵列 产品 SI6963DQ
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