SSM6N61NU,LF
￥3.02
MOSFET 2N-CH 20V 4A UDFN
| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 3.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 10V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 6-WDFN Exposed Pad |
| Supplier Device Package | 6-UDFNB (2x2) |
新闻资讯
Toshiba Electronic Devices and Storage Corporation FET、MOSFET 阵列 产品 SSM6N61NU,LF
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