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HP8M31TB1

¥17.42
FET、MOSFET 阵列

HP8M31TB1 IS LOW ON-RESISTANCE A

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta)
Rds On (Max) @ Id, Vgs65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs12.3nC @ 10V, 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 30V, 2300pF @ 30V
Power - Max3W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-PowerTDFN
Supplier Device Package8-HSOP

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