| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V, 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V, 2800pF @ 25V |
| Power - Max | 27W (Tc), 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual Asymmetric |
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Vishay/ Siliconix FET、MOSFET 阵列 产品 SQJ244EP-T1_GE3
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