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PMDT290UCE,115

¥3.10
FET、MOSFET 阵列
Nexperia

MOSFET N/P-CH 20V SOT666

参数名称参数值
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C800mA, 550mA
Rds On (Max) @ Id, Vgs380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds83pF @ 10V
Power - Max500mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ CaseSOT-563, SOT-666
Supplier Device PackageSOT-666

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Nexperia FET、MOSFET 阵列 产品 PMDT290UCE,115

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